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Growth of silicon homoepitaxial thin films by ultrahigh vacuum ion beam sputter deposition

 

作者: C. Schwebel,   F. Meyer,   G. Gautherin,   C. Pellet,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1986）
卷期: Volume 4, issue 5  

页码: 1153-1158

 

ISSN:0734-211X

 

年代: 1986

 

DOI:10.1116/1.583475

 

出版商: American Vacuum Society

 

关键词: SILICON;EPITAXIAL LAYERS;MORPHOLOGY;CRYSTAL DOPING;EFFICIENCY;ELECTRICAL PROPERTIES;THICKNESS;FILM GROWTH;SPUTTERING;ION COLLISIONS;ION BEAMS;Si

 

数据来源: AIP

 

摘要:

Silicon homoepitaxial films have been grown by ion beam sputter deposition using an ultrahigh vacuum (UHV) apparatus withinsitudiagnostic equipment. The deposition conditions are characterized and the beginning of single crystal growth occurs at 250 °C. Films of high crystalline and morphological quality are obtained at deposition temperatures above 700 °C, where good doping element transfer efficiency from the target to the film is observed. Room temperature bulk mobility is found for film thicknesses as low as 0.5 μm and deposition temperatures near 700 °C.

 

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