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Effect of ionized donors on the electron and hole densities of states in silicon

 

作者: Jeremiah R. Lowney,   Herbert S. Bennett,  

 

期刊: Journal of Applied Physics  （AIP Available online 1983）
卷期: Volume 54, issue 3  

页码: 1369-1374

 

ISSN:0021-8979

 

年代: 1983

 

DOI:10.1063/1.332159

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A self‐consistent second Born aproxiamtion has been used to calculate the change in the electron and hole densities of states due to ionized donors in silicon. The results are compared with a previous partial‐wave technique and found to be in good agreement for a case of common applicability, i.e., a donor density of 1020cm−3at room temperature.

 

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