Irradiation at ∼10°K using 1.10 Mev electrons produces very different changes in the electrical properties ofn‐type Ge as compared to those produced inp‐type Ge. Inn‐type Ge, more carriers are removed per incident electron at 10°K than at 78°K. However about 50% of the removed carriers are recovered in two stages of annealing, at 34°K and 64°K, after low temperature irradiation. Irradiation at 0.315 Mev, after a 1.10 Mev irradiation, also produces recovery of about 50% of the carriers removed by the 1.10 Mev irradiation. Inp‐type Ge, low temperature irradiation is at least 100 times less effective in removing carriers than is the case inntype. Annealing of an irradiatedp‐type sample to 130°K produces no measurable change. It is concluded that the stability of close‐vacancy‐interstitial pairs against recombination is less inptype than inn‐type Ge. A qualitative argument as to the origin of this difference in stability is presented.