Technique for measurement of the minority carrier mobility with a bipolar junction transistor
作者:
S. L. D’Souza,
M. R. Melloch,
M. S. Lundstrom,
E. S. Harmon,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 4
页码: 475-477
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118185
出版商: AIP
数据来源: AIP
摘要:
A simple technique to measure the minority carrier mobility using a bipolar junction transistor is demonstrated. By fixing the base-emitter voltage, the carrier injection into the base is constant. The collector current is then monitored as a function of a magnetic field applied perpendicular to the current transport across the base. The magnetic field leads to an increase in base transit time and a corresponding decrease in collector current. From the resulting fractional change in collector current, the minority carrier mobility in the base can be determined. For narrow base transistors, quasiballistic transport across the base must be taken into account when determining the bulk minority carrier mobility. ©1997 American Institute of Physics.
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