Surface photoabsorption studies of the chemical structure of GaInP grown by organometallic vapor phase epitaxy
作者:
H. Murata,
I. H. Ho,
T. C. Hsu,
G. B. Stringfellow,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 25
页码: 3747-3749
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115370
出版商: AIP
数据来源: AIP
摘要:
The surface structure ofGa0.52In0.48Pwas studied by surface photoabsorption. An absorption peak due to P dimers onGa0.52In0.48Pwas observed at ∼400 nm, shorter than for InP (430 nm). From comparison with results for GaAs and InP, the data are interpreted to indicate that at a tertiarybutylphosphine (TBP) pressure of 50 Pa for temperatures below 670 °C, the P‐stabilized surface has P dimers aligned along the [1¯10] direction, i.e., it has a (2×4)‐like structure. Above 670 °C, the 400 nm peak due to the P‐dimer structure disappears because of P desorption from the surface at this TBP partial pressure. EpitaxialGa0.52In0.48Players grown using TBP, trimethylgallium and ethyldimethylindium are nearly disordered at 670 °C and highly ordered at 620 °C. These data suggest a correlation between surface structure and ordering. ©1995 American Institute of Physics.
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