We have combined vapor‐liquid‐solid mechanisms with a moving‐mask‐growth technique in a study of the nucleation and condensation of single‐crystal silicon films deposited on amorphous dielectric substrates by vacuum evaporation of silicon. Using this VLS‐MMG approach we have grown silicon single crystals up to 50 × 300 &mgr; in lateral dimension on fused quartz substrates at substrate temperatures of 800 to 900°C.