Stress in dc sputtered TiN/B–C–N multilayers
作者:
S. Fayeulle,
M. Nastasi,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 10
页码: 6703-6708
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365211
出版商: AIP
数据来源: AIP
摘要:
Stress in crystalline TiN/amorphous B–C–N multilayered thin films has been determined by the substrate curvature technique. It is established that the total stress is dependent on the number of deposited bilayers and on the bilayer repeat length. The linear relationship between the stress and the inverse of the bilayer repeat length allows calculation of the value of the interface stress. It is found to be compressive with a value between 1.79 and2.46 J/m2,depending on the calculation method. An apparent dependence between the interface stress and the total thickness of the multilayer film is observed. It is interpreted as an additional relaxation due to an increase of the roughness of the interfaces when the number of deposited bilayers is increased. ©1997 American Institute of Physics.
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