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Role of step‐flow dynamics in interface roughening and in the spontaneous formation of InGaAs/InP wire‐like arrays

 

作者: H. M. Cox,   D. E. Aspnes,   S. J. Allen,   P. Bastos,   D. M. Hwang,   S. Mahajan,   M. A. Shahid,   P. C. Morais,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 57, issue 6  

页码: 611-613

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.103613

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We investigate a morphological instability that causes an InGaAs/InP multiquantum well structure grown on a vicinal (001) InP surface to spontaneously evolve into an array of InGaAs quasi‐one‐dimensional filaments buried in an InP matrix. To explain this behavior, we propose a step‐flow growth model involving different lateral growth velocities for heteroepitaxy and homoepitaxy. A computer simulation based on the model agrees closely with the experiment.

 

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