Dependence of the electron multiplication factor on the bias voltage was considered for the blocked impurity band (BIB) detector. We found that in high gain BIB detectors multiplication factor self‐stabilization can be achieved. When bias voltageVBincreases, the multiplication factor curve flattens, starting at a certain valueVB. This can be explained by the presence of an electric field and electron current in the neutral region of the BIB detector infrared‐active layer. The influence of this behavior on the performance characteristics of BIB detectors is briefly discussed.