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Analytical solution of the breakdown voltage for 6H‐silicon carbidep+njunction

 

作者: Dae‐Seok Byeon,   Min‐Koo Han,   Yearn‐Ik Choi,  

 

期刊: Journal of Applied Physics  （AIP Available online 1996）
卷期: Volume 79, issue 5  

页码: 2796-2797

 

ISSN:0021-8979

 

年代: 1996

 

DOI:10.1063/1.361113

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An analytical solution of the breakdown voltage for 6H‐silicon carbidep+njunction has been derived by employing an effective ionization coefficient. The breakdown voltage extracted from our analytical model agrees fairly well with the experimental data in the range of 1016–1018cm−3doping levels. ©1996 American Institute of Physics.

 

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