The disorder induced far infrared and microwave absorption characteristic of amorphous materials is shown to depart from the general frequency squared dependence between 0.1 and 10 cm−1in glassy As2Se3and SiO2. The absorption is also temperature dependent in this frequency region. These results are discussed in terms of a simple illustrative model which invokes a coupling of the photons to a Debye‐like density of low frequency modes through the mechanism of a spatially fluctuating electronic charge.