Degradation mechanisms studies in CdS/CdTe solar cells with ZnTe:Cu/Au back contact
作者:
D. Morgan,
J. Tang,
V. Kaydanov,
T. R. Ohno,
J. U. Trefny,
期刊:
AIP Conference Proceedings
(AIP Available online 1999)
卷期:
Volume 462,
issue 1
页码: 200-205
ISSN:0094-243X
年代: 1999
DOI:10.1063/1.57899
出版商: AIP
数据来源: AIP
摘要:
CdS/CdTe/ZnTe:Cu/Au solar cells were fabricated and tested under stressed conditions including enhanced temperature, forward and reverse bias, open circuit, dark and light. Discussion of results was focused mostly on the development of the back contact Schottky diode (increase in series resistance). Changes in the cell parameters were detected based on the analysis of the dynamic resistance of a cell (dV/dJ) at forward biases. A possible role of electromigration of the Cu dopant was discussed. ©1999 American Institute of Physics.
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