Strong correlation between new donors and rodlike defects formed at 650 °C in phosphorus‐doped, carbon‐lean Czochralski silicon preannealed at 450 °C
作者:
Yoichi Kamiura,
Fumio Hashimoto,
Minoru Yoneta,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 3
页码: 1358-1361
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346683
出版商: AIP
数据来源: AIP
摘要:
Evidence is presented for strong correlation between new donors and rodlike defects generated at 650 °C in phosphorus‐doped, carbon‐lean Czochralski silicon preannealed at 450 °C. It is proposed that there are, in general, several types of new donors depending on experimental conditions, and one type of new donor, which is generated preferentially under the above special condition, arises from rodlike defects.
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