Nitrogen has been implanted in GaAs1−xPxcrystals of direct (x=0.37) and indirect (x=0.50) compositions. Photoluminescence spectra for the implanted material are consistent with previously reported results for GaAs1−xPxwith N incorporated during growth. Implantations were performed at 200 keV with fluences sufficient to produce calculated peak N concentrations in the range 1017−1019cm−3. Samples heated to 200 °C during implantation exhibit improved annealing properties above 800 °C compared with room‐temperature implantations.