Hot-electron camel transistor
作者:
J.M.Shannon,
期刊:
IEE Journal on Solid-State and Electron Devices
(IET Available online 1979)
卷期:
Volume 3,
issue 5
页码: 142-144
年代: 1979
DOI:10.1049/ij-ssed.1979.0030
出版商: IEE
数据来源: IET
摘要:
A transistor is proposed in which hot electrons cross a degenerate semiconductor base region and overcome a potential barrier in the bulk of the semiconductor which forms a collector. Structures in silicon corresponding to this concept have been fabricated using low-energy ion implantation and have given transistor action consistent with hot-electron transport.
点击下载:
PDF
(439KB)
返 回