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Time‐delayed luminescence from oxidized porous silicon after ultraviolet excitation

 

作者: A. Kux,   D. Kovalev,   F. Koch,  

 

期刊: Applied Physics Letters  (AIP Available online 1995)
卷期: Volume 66, issue 1  

页码: 49-51

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.114178

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Oxidized porous silicon is known to luminesce efficiently and with a ns‐fast response in the green‐blue region of the spectrum (2.3–2.7 eV) at room temperature. For microporous Si processed by rapid thermal oxidation at 1100–1200  °C in a dry oxygen ambient, we observe that the blue light has a time‐delayed component that indicates carrier trapping. In addition to the well‐established ultrafast light (∼1 ns) a signal with a time delay of order 1 s is present under UV photoexcitation. The time‐delayed blue light exists at low temperature and has an excitation onset edge at 4.3±0.1 eV, an energy that is usually associated with a band discontinuity at the Si–SiO2interface. ©1995 American Institute of Physics.

 

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