Time‐delayed luminescence from oxidized porous silicon after ultraviolet excitation
作者:
A. Kux,
D. Kovalev,
F. Koch,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 1
页码: 49-51
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114178
出版商: AIP
数据来源: AIP
摘要:
Oxidized porous silicon is known to luminesce efficiently and with a ns‐fast response in the green‐blue region of the spectrum (2.3–2.7 eV) at room temperature. For microporous Si processed by rapid thermal oxidation at 1100–1200 °C in a dry oxygen ambient, we observe that the blue light has a time‐delayed component that indicates carrier trapping. In addition to the well‐established ultrafast light (∼1 ns) a signal with a time delay of order 1 s is present under UV photoexcitation. The time‐delayed blue light exists at low temperature and has an excitation onset edge at 4.3±0.1 eV, an energy that is usually associated with a band discontinuity at the Si–SiO2interface. ©1995 American Institute of Physics.
点击下载:
PDF
(63KB)
返 回