Low‐temperature diamond deposition by microwave plasma‐enhanced chemical vapor deposition
作者:
Y. Liou,
A. Inspektor,
R. Weimer,
R. Messier,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 55,
issue 7
页码: 631-633
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101807
出版商: AIP
数据来源: AIP
摘要:
Thin diamond films were deposited on silicon, MgO, fused silica, and soda lime silica glass at low temperature (the lowest temperature ∼365 °C) by microwave plasma‐enhanced chemical vapor deposition. The films were identified as diamond by Raman spectroscopy. A Raman peak shift of several wave numbers to either lower or higher wave numbers due to the strain of the film is also observed. The film deposited on glass is highly transparent. The fine faceted crystals in the film are shown in scanning electron microscope micrographs.
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