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Low‐temperature diamond deposition by microwave plasma‐enhanced chemical vapor deposition

 

作者: Y. Liou,   A. Inspektor,   R. Weimer,   R. Messier,  

 

期刊: Applied Physics Letters  (AIP Available online 1989)
卷期: Volume 55, issue 7  

页码: 631-633

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.101807

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Thin diamond films were deposited on silicon, MgO, fused silica, and soda lime silica glass at low temperature (the lowest temperature ∼365 °C) by microwave plasma‐enhanced chemical vapor deposition. The films were identified as diamond by Raman spectroscopy. A Raman peak shift of several wave numbers to either lower or higher wave numbers due to the strain of the film is also observed. The film deposited on glass is highly transparent. The fine faceted crystals in the film are shown in scanning electron microscope micrographs.

 

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