Porous silicon was doped by Er ions using electroplating and was converted to silicon-rich silicon oxide (SRSO) by partial thermal oxidation at 900 °C. The room-temperature photoluminescence (PL) at ∼1.5 &mgr;m is intense and narrow (⩽15 meV) and decreases by less than 50&percent; from 12 to 300 K. The PL spectrum reveals no luminescence bands related to Si-bandedge recombination, point defects, or dislocations and shows that theEr3+centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of Er-doped SRSO (SRSO:Er) was manufactured and room temperature electroluminescence at ∼1.5 &mgr;m was demonstrated. ©1997 American Institute of Physics.