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Photoluminescence in strained‐layer quantum wells

 

作者: T. Y. Wang,   Z. H. Lin,   G. B. Stringfellow,   P. C. Taylor,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1989）
卷期: Volume 7, issue 4  

页码: 824-826

 

ISSN:0734-211X

 

年代: 1989

 

DOI:10.1116/1.584608

 

出版商: American Vacuum Society

 

关键词: INDIUM PHOSPHIDES;GALLIUM ARSENIDES;INDIUM ARSENIDES;LAYERS;HETEROJUNCTIONS;STRAINS;ELECTRONIC STRUCTURE;ENERGY GAP;PHOTOLUMINESCENCE;MEASURING METHODS;InP;(Ga,In)As

 

数据来源: AIP

 

摘要:

Photoluminescence and thermally modulated photoluminescence have been employed in thin single quantum wells in the InP/Ga1−xInxAs/InP system (0≤x≤1). The potential use of these methods to estimate conduction and valence‐band offsets in strained‐layer heterostructures is discussed.

 

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