We have grown homogeneous alloys of Sn1−xGexwith 0.01<x<0.1 by molecular beam epitaxy on ⟨100⟩ InSb substrates. The Sn‐Ge system is immiscible due to differing equilibrium crystal structures at the growth temperature. By stabilizing the diamond cubic &agr;‐Sn with the InSb template, we have created a metastable miscibility region for alloying Sn and Ge. Pure &agr;‐Sn grown on ⟨100⟩ InSb shows a tetragonal expansion perpendicular to the substrate because of the slightly larger lattice parameter of &agr;‐Sn. As the smaller Ge atom is added, the strain converts from compressive to tension resulting in an effective 1.66% tetragonal contraction in the growth direction for Sn0.92Ge0.08.