Structure of the ZnSe/GaAs heteroepitaxial interface
作者:
D. Li,
J. M. Gonsalves,
N. Otsuka,
J. Qiu,
M. Kobayashi,
R. L. Gunshor,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 5
页码: 449-451
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103662
出版商: AIP
数据来源: AIP
摘要:
Interfaces of pseudomorphic (100) ZnSe/GaAs heterostructures grown by molecular beam epitaxy have been studied by transmission electron microscopy. The observation of three different heterostructures suggests the existence of a transition structure at the ZnSe/GaAs interfaces which have formed on As‐deficient GaAs surfaces. The transition structure appears as a bright line in dark field images of the 200 reflection, while it becomes a dark line in dark field images of the 400 reflection. These observations are explained by assuming the existence of an interface layer which has a zinc blende type structure having vacancies in one of the face centered cubic sublattices.
点击下载:
PDF
(481KB)
返 回