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Two‐band modeling of narrow band gap and interband tunneling devices

 

作者: J. R. So¨derstro¨m,   E. T. Yu,   M. K. Jackson,   Y. Rajakarunanayake,   T. C. McGill,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 68, issue 3  

页码: 1372-1375

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.346688

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A two‐band transfer matrix method has been developed to study tunneling currents in narrow gap and interband tunnel structures. This relatively simple model gives good agreement with recently reported experimental results for InAs/AlSb/InAs/AlSb/InAs double‐barrier heterostructures and InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling devices, and should be useful in the design of new interband tunneling devices.

 

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