We investigated luminescence characteristics of the (GaP)n(GaAs)natomic layer superlattices grown on the [001] GaAs substrate by pulsed jet epitaxy. In the single monolayer superlattice (n=1), only direct transition was observed at the whole range of measurement temperature and photoexcitation intensity. Both direct &Ggr;‐type and indirectX‐type emissions were observed in the indirect transition multimonolayer superlattices (n=2–4). These transitions were competitive. The direct emission was stronger at room temperature; however, the indirect emission was intense at low temperatures. This could be explained in terms of oscillator strength and thermal distribution of photoexcitation electrons into the &Ggr; andXlevels in the conduction band. Under high excitation, the direct emission increased superlinearly with the excitation intensity, but the indirect emission showed a saturation for its longer radiative recombination lifetime. We also observed the band‐to‐acceptor transition at the lower energy side of the indirect band‐to‐band transition. This acceptor was expected to be incorporated into the GaAs well layer during growth.