The oxygen effect in the growth kinetics of platinum silicides
作者:
F. Nava,
S. Valeri,
G. Majni,
A. Cembali,
G. Pignatel,
G. Queirolo,
期刊:
Journal of Applied Physics
(AIP Available online 1981)
卷期:
Volume 52,
issue 11
页码: 6641-6646
ISSN:0021-8979
年代: 1981
DOI:10.1063/1.328655
出版商: AIP
数据来源: AIP
摘要:
Silicide formation is strongly affected by the presence of oxygen contained in the metal film. A study has been performed by heating at various times and temperatures samples constituted by a thin Pt film sputter deposited on a silicon substrate. Four different oxygen concentrations were implanted in the Pt film ranging from 1 to 0.1 at.%. The presence of oxygen slows down the growth rate of Pt2Si. At 315 °C in the sample with an oxygen concentration of 1 at.%, about 1000 A˚ of Pt2Si are formed after 20 min of annealing. During the silicide formation, the oxygen originally contained in the platinum films segregates at the Pt2Si/Pt interface. This accumulation acts as a barrier for the transport of Pt and a new phase, PtSi, can form at the Pt2Si/Si interface. The dose necessary to stop the Pt2Si reaction is about (2–4)×1015at./cm2at 315 °C.
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