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Etching of GaAs/AlGaAs rib waveguide structures using BCl3/Cl2/N2/Ar electron cyclotron resonance

 

作者: C. Constantine,   R. J. Shul,   C. T. Sullivan,   M. B. Snipes,   G. B. McClellan,   M. Hafich,   C. T. Fuller,   J. R. Mileham,   S. J. Pearton,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1995）
卷期: Volume 13, issue 5  

页码: 2025-2030

 

ISSN:1071-1023

 

年代: 1995

 

DOI:10.1116/1.588128

 

出版商: American Vacuum Society

 

关键词: ALUMINIUM ARSENIDES;ARGON;BORON CHLORIDES;CHEMICAL REACTIONS;CHLORINE;ELECTRON CYCLOTRON−RESONANCE;ETCHING;GALLIUM ARSENIDES;NITROGEN;PLASMA;WAVEGUIDES;GaAs;(Al,Ga)As

 

数据来源: AIP

 

摘要:

An anisotropic nonselective etch for GaAs/AlGaAs rib waveguides has been developed for use under electron cyclotron resonance conditions. The plasma chemistry features BCl3to minimize AlGaAs oxidation effects and small additions of N2to induce sidewall protection when using photoresist masks. The fundamental mode attenuation in GaAs/AlGaAs waveguides is sensitive to the choice of both plasma chemistry and masking material, but can be reduced to ≤1 dB cm−1for channel widths of 4–5 μm.

 

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