A SiC thin‐film thermistor for high‐temperature use has been developed by using rf‐sputtered SiC thin films. This thermistor can be used for industrial and consumer use within an operating temperature range of −100 to 450 °C. By using SiC thin films, the thermistor maintains high electrical stability. The resistance change is less than 3% after exposure to heat at 400 °C for 2000 h. In addition, the film growth technique made possible the production of a high‐accuracy thermistor, i.e., thermistor coefficient <±0.5%, thermistor resistance <±1.5%.