Quantitative inelastic tunneling spectroscopy in the silicon metal-oxide-semiconductor system
作者:
Whye-Kei Lye,
Eiji Hasegawa,
Tso-Ping Ma,
Richard C. Barker,
Yin Hu,
John Kuehne,
David Frystak,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 17
页码: 2523-2525
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120106
出版商: AIP
数据来源: AIP
摘要:
A dual temperature method has been developed for subtracting the 77 K thermally smoothed background from 4.2 K inelastic electron tunneling spectra of ultrathin dielectric metal-insulator-semiconductor junctions. A mode resolving method applied to the remaining spectrum clearly identifies electrode and insulator vibrational modes. The ability to track these relative mode positions and amplitudes shows promise as a unique interface analysis and process diagnostic method. Results are reported on polycrystalline silicon gate, 1.5-nm-thick oxide devices fabricated on 1–10 &OHgr; cm,N-type, (100) silicon substrates by a standard industrial process sequence. ©1997 American Institute of Physics.
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