Epitaxial bismuth-layer-structured perovskite ferroelectric thin films grown by pulsed laser deposition
作者:
Alain Pignolet,
KayyarM. Satyalakshmi,
Marin Alexe,
NikolaiD. Zakharov,
Catalin Harnagea,
Stephan Senz,
Dietrich Hesse,
Ulrich Gösele,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 26,
issue 1-4
页码: 21-29
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908215606
出版商: Taylor & Francis Group
关键词: Pulsed laser deposition;Bi-layer-structured perovskites;epitaxial ferroelectric films
数据来源: Taylor
摘要:
Thin films of bismuth-layer-structured perovskites such as SrBi2Ta2O9(SBT) and BaBi4Ti4O15(BBiT) with preferred orientations have been grown by pulsed laser deposition (PLD) on epitaxial conducting LaNiO3(LNO) electrodes on single crystalline (100) SrTiO3(STO) or on top of epitaxial buffer layers on (100) silicon. X-ray diffraction (XRD) analysis and cross-section electron microscopy reveal that the films consist of c-axis oriented regions and mixed a-axis and c-axis oriented regions. The regions with mixed a-axis and c-axis orientation show high surface roughness due to the rectangular crystallites protruding out of the surface, whereas the c-axis oriented regions show a smooth surface morphology. In the mixed a-axis and c-axis oriented regions, the SBT and BBiT films exhibit saturated ferroelectric hysteresis loops with a remnant polarization Prof about 2 μC/cm2and coercive fields Ecof about 20 kV/cm for SBT and 60 kV/cm for BBiT. No polarization fatigue was observed up to 108cycles neither for SBT nor for BBiT films. The regions having c-axis orientation with a smooth surface morphology in contrast exhibit a linear P-E curve. The results show that the ferroelectric properties of a planar capacitor consisting of ferroelectric Bi-layer-structured perovskites depend on the crystalline orientation of the film.
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