Diffusion of phosphorus in arsenic and boron doped silicon
作者:
Fred Wittel,
Scott Dunham,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 11
页码: 1415-1417
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113219
出版商: AIP
数据来源: AIP
摘要:
The diffusivity of phosphorus is measured in silicon with nearly uniform arsenic or boron background dopingno>(0.1<n/ni<30) at temperatures of 915, 1015, and 1105 °C. It is found that diffusion via neutral and single negatively charged point defects are sufficient to account for the experimental data, with no need to include diffusion via double negatively charged point defects. Greatly reduced diffusivity is observed in the boron‐doped samples, which is consistent with the formation of immobile donor–acceptor pairs. Activated diffusion and pairing coefficients are calculated based on this work and combined with experimental results previously reported in the literature. ©1995 American Institute of Physics.
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