Quantized conductance in a heterostructurally definedGa0.25In0.75As/InPquantum wire
作者:
P. Ramvall,
N. Carlsson,
I. Maximov,
P. Omling,
L. Samuelson,
W. Seifert,
Q. Wang,
S. Lourdudoss,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 7
页码: 918-920
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119688
出版商: AIP
数据来源: AIP
摘要:
We report on the observation of quantized conductance up to 10 K in epitaxially regrown, heterostructurally defined, 100-nm-wideGa0.25In0.75As/InPquantum wires. In addition to the plateaus at integer steps of2e2/h,we observe plateaus at0.2(2e2/h),0.7(2e2/h),and1.5(2e2/h),indicating spin polarization at zero magnetic field. Of these, the first two plateaus appear to evolve into one at around0.5(2e2/h)when the sample is subjected to a magnetic field parallel to the quantum wire. The observation of quantized conductance is made possible by the substantial improvement in the quality of the interface by regrowth. ©1997 American Institute of Physics.
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