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Quantized conductance in a heterostructurally definedGa0.25In0.75As/InPquantum wire

 

作者: P. Ramvall,   N. Carlsson,   I. Maximov,   P. Omling,   L. Samuelson,   W. Seifert,   Q. Wang,   S. Lourdudoss,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 71, issue 7  

页码: 918-920

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119688

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report on the observation of quantized conductance up to 10 K in epitaxially regrown, heterostructurally defined, 100-nm-wideGa0.25In0.75As/InPquantum wires. In addition to the plateaus at integer steps of2e2/h,we observe plateaus at0.2(2e2/h),0.7(2e2/h),and1.5(2e2/h),indicating spin polarization at zero magnetic field. Of these, the first two plateaus appear to evolve into one at around0.5(2e2/h)when the sample is subjected to a magnetic field parallel to the quantum wire. The observation of quantized conductance is made possible by the substantial improvement in the quality of the interface by regrowth. ©1997 American Institute of Physics.

 

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