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Organometallic vapor phase epitaxial growth of InP using new phosphorus sources

 

作者: C. A. Larsen,   C. H. Chen,   M. Kitamura,   G. B. Stringfellow,   D. W. Brown,   A. J. Robertson,  

 

期刊: Applied Physics Letters  (AIP Available online 1986)
卷期: Volume 48, issue 22  

页码: 1531-1533

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.96858

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Two organophosphorus compounds, isobutylphosphine and tertiarybutylphosphine, have been investigated for their possible use as precursors in the organometallic vapor phase epitaxy process. They are the first nonhydride compounds to be used as phosphorus sources. Pyrolysis studies show that the first decomposition products are phosphine and various organic compounds. The phosphine then pyrolyzes to give phosphorus. The materials are less pyrophoric and less toxic than phosphine, and so are safer to use. The compounds have been used to grow epitaxial layers of InP on InP and GaAs substrates. The layers exhibit photoluminescence and electrical properties which are similar to those of layers grown with phosphine.

 

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