Platinum alloys and iridium bottom electrodes for perovskite based capacitors in dram applications
作者:
A. Grill,
M.J. Brady,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1995)
卷期:
Volume 8,
issue 3-4
页码: 299-308
ISSN:1058-4587
年代: 1995
DOI:10.1080/10584589508219664
出版商: Taylor & Francis Group
关键词: electrodes;iridium;platinum alloys;diffusion barriers
数据来源: Taylor
摘要:
Two types of potential bottom electrode structures for integration of ferroelectric materials in DRAM technology have been investigated: one based on iridium, the other based on platinum alloyed with oxygen gettering elements, such as B and Ti. The electrode structures, deposited on Si substrates, have been annealed in oxygen at 650°C for 30 min and characterized by RBS and AES. It was found that alloying the Pt with 3% of alloying elements had no beneficial effect and did not improve the properties of Pt as a barrier to oxygen diffusion. At the investigated annealing conditions, oxygen diffuses through Pt or its alloys and oxidizes the underlaying material. On the other hand, a thickness of 1100 Å of Ir was found to provide a barrier to oxygen diffusion under the same conditions. A layer of Ta in contact with Pt or Ir was found to deteriorate the barrier properties of both metals at the investigated annealing conditions.
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