首页   按字顺浏览 期刊浏览 卷期浏览 Conduction band offsets in CdZnSSe/ZnSSe single quantum wells measured by deep level tr...
Conduction band offsets in CdZnSSe/ZnSSe single quantum wells measured by deep level transient spectroscopy

 

作者: P. F. Baude,   M. A. Haase,   G. M. Haugen,   K. K. Law,   T. J. Miller,   K. Smekalin,   J. Phillips,   P. Bhattacharya,  

 

期刊: Applied Physics Letters  （AIP Available online 1996）
卷期: Volume 68, issue 25  

页码: 3591-3593

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.116647

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Conduction‐band offsets in wide‐band‐gap CdZnSSe/ZnSSe single quantum well structures have been characterized by deep level transient spectroscopy (DLTS) measurements. 50 A˚ thick Cd0.3Zn0.7S0.06Se0.94single quantum wells with ZnS0.06Se0.94barriers were grown by molecular beam epitaxy on GaAs substrates. A thermal emission energy from the quaternary wells of 179±10 meV was measured. This corresponds to a conduction‐band offset energy of ∼251±20 meV. ©1996 American Institute of Physics.

 

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