Magnetic bubble devices require materials with a single easy‐axis of magnetization stably oriented normal to the device plane. We show that epitaxial films of cubic materials possessing growth‐ or stress‐induced anisotropies satisfy this condition in general only for {100}, {111}, and {110} orientations. Further conditions which must be fulfilled are −A′ > |Kl| + 2&pgr;M2for {100} films, −B′ > 4&pgr;M2for {111}, for {111}, and −(A′ +12B′) > |Kl|, + 4&pgr;M2and − B′ > 4&pgr;M2for {110}, where A′ = A + 30o&lgr;100/2 and B′ = B + 30o&lgr;111. Here &sgr;ois the in‐plane stress and A and B are the phenomonological constants of Gyorgyet al. describing the growth‐induced anisotropy. In bulk garnet crystals, material from {211} facets with its easy axis along <110> in the growth plane would be suitable for bubble applications. {211} facet material with its easy axis at an arbitrary angle in the {110} plane containing the facet normal is less desirable, since the angle is expected to be temperature sensitive. The induced easy axes of {110} facet material are symmetry directions, and no such difficulties are expected.