Ultrafast characterization of an in‐plane gate transistor integrated with photoconductive switches
作者:
K. Ogawa,
J. Allam,
N. de B. Baynes,
J. R. A. Cleaver,
T. Mishima,
I. Ohbu,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 10
页码: 1228-1230
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113245
出版商: AIP
数据来源: AIP
摘要:
An in‐plane gate field‐effect transistor is characterized by ultrafast electro‐optic sampling. The transistor is monolithically integrated with photoconductive switches in coplanar waveguide and <0.5 ps measurement time resolution is achieved. The gate‐drain capacitance of the transistor is obtained as 1.8 fF at zero drain voltage from displacement current transients. The gate‐drain capacitance is dominated by parasitic capacitance and the intrinsic gate‐drain capacitance is estimated as less than 0.2 fF. ©1995 American Institute of Physics.
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