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PHOTOEMISSION FROM InP‐Cs‐O

 

作者: R. L. Bell,   J. J. Uebbing,  

 

期刊: Applied Physics Letters  （AIP Available online 1968）
卷期: Volume 12, issue 3  

页码: 76-78

 

ISSN:0003-6951

 

年代: 1968

 

DOI:10.1063/1.1651906

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Photoelectric measurements on cleavedp+InP show that a process of cesiation and oxidation can produce a work function lower than the InP bandgap. Efficient photoemission results, with luminous efficiencies of 450 &mgr;A/lumen or better, and a threshold at 1.24 eV (1 &mgr;).

 

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