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SiC power device passivation using porous SiC

 

作者: C. I. Harris,   A. O. Konstantinov,   C. Hallin,   E. Janze´n,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 66, issue 12  

页码: 1501-1502

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.113668

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A novel technique for the passivation of high power SiCp‐ndiodes using porous SiC is demonstrated. An increase from around 250 to 600 V in the reverse breakdown voltage is observed following the passivation treatment. The breakdown mode is also reversible in the passivated case in contrast to the permanent degradation in the nontreated device. ©1995 American Institute of Physics.

 

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