Using the time‐of‐flight method, the drift velocity for minority electrons in highly dopedp‐GaAs was successfully measured at room temperature. The obtained velocity electric field relationships indicate that the velocity does not decrease but slightly increases and then saturates with increasing hole concentration above 1×1019cm−3. Such behavior is well explained by the effects of degeneracy, which reduces the electron‐hole interaction, and the hole distribution function dependence on electric field from the Monte Carlo calculation.