Interest in AlGaInAs on InP for optoelectronic applications
作者:
M.Allovon,
M.Quillec,
期刊:
IEE Proceedings J (Optoelectronics)
(IET Available online 1992)
卷期:
Volume 139,
issue 2
页码: 148-152
年代: 1992
DOI:10.1049/ip-j.1992.0026
出版商: IEE
数据来源: IET
摘要:
The III-V AlGaInAs quaternary is particularly well suited to conventional molecular beam epitaxy, and many devices based on this material system have already proved of interest in high-performance microelectronics. However, although this lattice-matched-to-InP quaternary covers the same wavelength range as the well known GaInAsP system, it was not until recently considered as a serious challenger for optoelectronic applications. This is no longer the case, because of theoretical considerations and because of recent device achievements, especially low-threshold MQW laser diodes and high frequency electro-optic modulators.
点击下载:
PDF
(623KB)
返 回