Considering all aspects of the comment and the most recent deep level transient spectroscopy (DLTS) and Raman scattering results, we conclude that the 68‐meV single aceptor center does exist in Ga‐rich,p‐type GaAs at concentrations exceeding that of the 78‐meV center. Discussion in the comment which misconstrues our results is pointed out and a rebuttal is given to the unfounded objections against DLTS data.