Amorphous hydrogenated silicon (a‐Si:H) basedpn‐doping superlattices grown by radio‐frequency‐plasma deposition onto crystalline Si substrates were cleaved in air according to the crystallographic orientation of the substrate material. Their cross‐sectional face is investigated using scanning tunneling microscopy (STM) and scanning force microscopy (SFM). With constant current STM in a dry nitrogen ambient at atmospheric pressure tip deflections due to thepn‐superlattice periodicity are observed. With contact mode SFM in air only the transition from the substrate to the superlattice thin film but no periodic structure is resolved. A model calculation suggests that the apparent periodic height variation in constant current STM is due to a difference betweenp‐ andn‐type doped layers in their density of accessible states for tunneling.