Reflection high‐energy electron diffraction and x‐ray photoelectron spectroscopic study on (NH4)2Sx‐treated GaAs (100) surfaces
作者:
Hiroyuki Hirayama,
Yoshishige Matsumoto,
Haruhiro Oigawa,
Yasuo Nannichi,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 25
页码: 2565-2567
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101051
出版商: AIP
数据来源: AIP
摘要:
(NH4)2Sx‐treated GaAs (100) surfaces were heated in an ultrahigh vacuum. Reflection high‐energy electron diffraction (RHEED) and Ga, As, S, and O x‐ray photoelectron spectroscopic (XPS) changes were observed. The sulfide‐treated surface showed a streaky 1×1 RHEED pattern without heating. A 2×1 RHEED pattern appeared during heating to 260 and 420 °C. At these temperatures, the S XPS peak was still observed. The 2×1 pattern is thought to be S induced. On the (NH4)2Sx‐treated surface, no oxidized As XPS signal was observed. Moreover, the O XPS peak disappeared rapidly during the heating above 260 °C. These results suggest that the 2×1 S structure caused the GaAs (100) surface passivation.
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