首页   按字顺浏览 期刊浏览 卷期浏览 Generation‐recombination noise in submicron semiconductor layers: Influence of t...
Generation‐recombination noise in submicron semiconductor layers: Influence of the edges

 

作者: T. G. M. Kleinpenning,   S. Jarrix,   G. Lecoy,  

 

期刊: Journal of Applied Physics  （AIP Available online 1995）
卷期: Volume 78, issue 4  

页码: 2883-2885

 

ISSN:0021-8979

 

年代: 1995

 

DOI:10.1063/1.360030

 

出版商: AIP

 

数据来源: AIP

 

摘要:

In highly doped thin semiconductor layers one often observes generation‐recombination (g‐r) noise with a broadened Lorentzian‐like spectrum. In a theoretical analysis we have shown that such a spectrum can be ascribed tog‐rprocesses between conduction band and monoenergetic traps in the edge of the layers. ©1995 American Institute of Physics.

 

点击下载:  PDF (325KB)



返 回