The atomic force microscope was employed to observed in air the surface atomic structure of InSe, one of III‐VI compound semiconductors with layered structures. Atomic arrangements were observed in bothn‐type andp‐type materials. The observed structures are in good agreement with those expected from bulk crystal structures. The atomic images became less clear by repeating the imaging process. Wide area imaging after the imaging of small area clearly showed that a mound was created at the spot previously imaged.