Simulation of current‐voltage characteristics of Ti‐W/nSi Schottky diodes using defects parameters extracted from deep level transient spectroscopy
作者:
D. Bauza,
G. Pananakakis,
期刊:
Journal of Applied Physics
(AIP Available online 1991)
卷期:
Volume 69,
issue 5
页码: 3357-3359
ISSN:0021-8979
年代: 1991
DOI:10.1063/1.348532
出版商: AIP
数据来源: AIP
摘要:
The parameters of electrically active defects created during the technological fabrication process of Ti‐W/nSi Schottky diodes are studied by deep level transient spectroscopy (DLTS). Using a self‐consistent simulation model and trap parameters extracted from DLTS measurements, current‐voltage characteristics of these diodes are simulated. It is found that a very satisfactory fitting can thus be obtained.
点击下载:
PDF
(301KB)
返 回