Effect of RF Parameters on Breakdown Limits in High‐Vacuum X‐Band Structures
作者:
Valery A. Dolgashev,
Sami G. Tantawi,
期刊:
AIP Conference Proceedings
(AIP Available online 1903)
卷期:
Volume 691,
issue 1
页码: 151-165
ISSN:0094-243X
年代: 1903
DOI:10.1063/1.1635116
出版商: AIP
数据来源: AIP
摘要:
RF breakdown is one of the major factors determining performance of high power rf components and rf sources. RF breakdown limits working power and produces irreversible surface damage. The breakdown limit depends on the rf circuit, structure geometry, and rf frequency. It is also a function of the input power, pulse width, and surface electric and magnetic fields. In this paper we discuss multi‐megawatt operation of X‐band rf structures at pulse width on the order of one microsecond. These structures are used in rf systems of high gradient accelerators. Recent experiments at Stanford Linear Accelerator Center (SLAC) have explored the functional dependence of breakdown limit on input power and pulse width. The experimental data covered accelerating structures and waveguides. Another breakdown limit of accelerating structures was associated with high magnetic fields found in waveguide‐to‐structure couplers. To understand and quantify these limits we simulated 3D structures with the electrodynamics code Ansoft HFSS and the Particle‐In‐Cell code MAGIC3D. Results of these simulations together with experimental data will be discussed in this paper. © 2003 American Institute of Physics
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