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Required minimum value of barrier height in minority-carrier m.i.s. solar cells

 

作者: O.M.Nielsen,  

 

期刊: IEE Proceedings I (Solid-State and Electron Devices)  (IET Available online 1980)
卷期: Volume 127, issue 3  

页码: 105-108

 

年代: 1980

 

DOI:10.1049/ip-i-1.1980.0020

 

出版商: IEE

 

数据来源: IET

 

摘要:

The saturation currents of minority-and majority-carrier m.i.s. solar cells have been compared to find the value of the barrier height ϕ′ms, where the dominating saturation current changes from a majority-carrier current to a minority-carrier current. For an interfacial oxide layer of 20 Å, the value ofϕ′mshas been calculated to be in the range 750-800 mV, whereas for an oxide layer of 10 Å, ϕ′ms, is found to be about 900-950 mV.

 

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