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Dielectric breakdown in high-ε films for ulsi DRAMs: III. Leakage current precursors and electrodes

 

作者: J.F. Scott,  

 

期刊: Integrated Ferroelectrics  (Taylor Available online 1995)
卷期: Volume 9, issue 1-3  

页码: 1-12

 

ISSN:1058-4587

 

年代: 1995

 

DOI:10.1080/10584589508012900

 

出版商: Taylor & Francis Group

 

关键词: Keywords:;Breakdown;leakage current;PZT;BST.

 

数据来源: Taylor

 

摘要:

A somewhat qualitative review of leakage currents J(V,t) in perovskite oxides is presented. It is stressed that space-charge-limited currents (SCLCs) are not alternatives to ionic conduction, Schottky emission, Poole-Frenkel, or Fowler-Nordheim tunneling, but can occur whenever currents due to any of those mechanisms reach a certain threshold and are no longer limited by the details of the metal electrode-ferroelectric interface. Standard metal-semiconductor band models that exclude surface states fail qualitatively to account for the experimental dependences of leakage currents and breakdown voltages on electrode work function; the correct model is metal-n-p-n-metal, with surface donor-state trapping. A discussion of conduction properties in these materials is presented from an ionic conductor viewpoint.

 

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