Dielectric breakdown in high-ε films for ulsi DRAMs: III. Leakage current precursors and electrodes
作者:
J.F. Scott,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1995)
卷期:
Volume 9,
issue 1-3
页码: 1-12
ISSN:1058-4587
年代: 1995
DOI:10.1080/10584589508012900
出版商: Taylor & Francis Group
关键词: Keywords:;Breakdown;leakage current;PZT;BST.
数据来源: Taylor
摘要:
A somewhat qualitative review of leakage currents J(V,t) in perovskite oxides is presented. It is stressed that space-charge-limited currents (SCLCs) are not alternatives to ionic conduction, Schottky emission, Poole-Frenkel, or Fowler-Nordheim tunneling, but can occur whenever currents due to any of those mechanisms reach a certain threshold and are no longer limited by the details of the metal electrode-ferroelectric interface. Standard metal-semiconductor band models that exclude surface states fail qualitatively to account for the experimental dependences of leakage currents and breakdown voltages on electrode work function; the correct model is metal-n-p-n-metal, with surface donor-state trapping. A discussion of conduction properties in these materials is presented from an ionic conductor viewpoint.
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