Photoluminescence study of impurity states in aluminum antimonide
作者:
G. Hofmann,
C. T. Lin,
E. Scho¨nherr,
J. Weber,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 3
页码: 1478-1482
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345655
出版商: AIP
数据来源: AIP
摘要:
We have characterized Czochralski‐grown undoped AlSb single crystals by low‐temperature photoluminescence and photoluminescence excitation spectroscopy. An excitonic band‐gap energyEgx=1.667±0.001 eV of AlSb was determined. In all samples we detect a dominant donor and acceptor. The donor binding energyED=151±3 meV and acceptor binding energyEA=37±3 meV are deduced from donor‐acceptor pair luminescence and the excited states of the acceptor from selective pair excitation. We tentatively identify the donor as sulfur and the acceptor as carbon.
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