首页   按字顺浏览 期刊浏览 卷期浏览 Photoluminescence study of impurity states in aluminum antimonide
Photoluminescence study of impurity states in aluminum antimonide

 

作者: G. Hofmann,   C. T. Lin,   E. Scho¨nherr,   J. Weber,  

 

期刊: Journal of Applied Physics  (AIP Available online 1990)
卷期: Volume 67, issue 3  

页码: 1478-1482

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.345655

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have characterized Czochralski‐grown undoped AlSb single crystals by low‐temperature photoluminescence and photoluminescence excitation spectroscopy. An excitonic band‐gap energyEgx=1.667±0.001 eV of AlSb was determined. In all samples we detect a dominant donor and acceptor. The donor binding energyED=151±3 meV and acceptor binding energyEA=37±3 meV are deduced from donor‐acceptor pair luminescence and the excited states of the acceptor from selective pair excitation. We tentatively identify the donor as sulfur and the acceptor as carbon.

 

点击下载:  PDF (550KB)



返 回