High temperature (≳150 °C) and low threshold current operation of AlGaInP/GaxIn1−xP strained multiple quantum well visible laser diodes
作者:
T. Katsuyama,
I. Yoshida,
J. Shinkai,
J. Hashimoto,
H. Hayashi,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 26
页码: 3351-3353
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105723
出版商: AIP
数据来源: AIP
摘要:
High temperature and very low threshold current operation of a separate confinement heterostructure (SCH) AlGaInP/GaxIn1−xP (x=0.43) strained multiple quantum well (SMQW) lasers has been achieved. Continuous wave (cw) operation was observed up to at least 150 °C with an output power of more than 7 mW, which is the highest cw operating temperature ever reported for devices operating in the visible wavelength region. The characteristic temperature between 20 and 80 °C was 130 K. The threshold current and threshold current density at 25 °C were 13.9 mA for a 5×160 &mgr;m device and 430 A/cm2for a 80×770 &mgr;m device.
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