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High temperature (≳150 °C) and low threshold current operation of AlGaInP/GaxIn1−xP strained multiple quantum well visible laser diodes

 

作者: T. Katsuyama,   I. Yoshida,   J. Shinkai,   J. Hashimoto,   H. Hayashi,  

 

期刊: Applied Physics Letters  (AIP Available online 1991)
卷期: Volume 59, issue 26  

页码: 3351-3353

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.105723

 

出版商: AIP

 

数据来源: AIP

 

摘要:

High temperature and very low threshold current operation of a separate confinement heterostructure (SCH) AlGaInP/GaxIn1−xP (x=0.43) strained multiple quantum well (SMQW) lasers has been achieved. Continuous wave (cw) operation was observed up to at least 150 °C with an output power of more than 7 mW, which is the highest cw operating temperature ever reported for devices operating in the visible wavelength region. The characteristic temperature between 20 and 80 °C was 130 K. The threshold current and threshold current density at 25 °C were 13.9 mA for a 5×160 &mgr;m device and 430 A/cm2for a 80×770 &mgr;m device.

 

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